YB6010010002 1550nm Narrow linewidth DFB Laser Diode Butterfly Module Specification

所属分类： DFB

特点：窄谱线宽、边发射DFB激光器，波长为1550nm

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PN: YB6010010002

1550nm Narrow linewidth DFB Laser Diode Butterfly Module Specification

Features

Narrow Spectral Linewidth, Edge-Emitting DFB for 1550 wavelength.
Low threshold current and High output power.
Excellent SMSR Performance.
High reliability design.
RoHS Compliant.
Operating temperature: -20~75 ℃ .
14-pin butterfly package: (With TEC).

Applications:

LiDAR OTDR

Description:

The high power and low threshold current of 1550nm laser module is a single-mode edge-emitting DFB laser chip in 14-pin butterfly package with thermoelectirc cooler(TEC), thermistor (NTC), monitor photodiode(MPD), optical isolator, lens inside，at the same time support customer-specified pin definition customization.

Absolute Maximum Ratings

Table 1 - Absolute Maximum Ratings

Parameter	Symbol	Min.	Max
Storage Temperature	℃	-40	85
Operation Temperature	℃	-20	75
Laser reverse voltage(T=25℃)	V	-	2
Laser forward current(T=25℃)	mA	-	700
TEC current	A		2
TEC voltage	V		4.4

Optical & Electrical Characteristics
Parameter	Symbol	Min.	Typ	Max	Unit	Note
Threshold Current	Ith	-	13	-	mA	T=25℃
Slope Efficiency	SE		0.2		mW/mA	T=25℃
Output Optical Power	Po	120	-	-	mW	T=25℃
Forward voltage	Vf	1	-	2	V	P=70mW,T=25℃
Wavelength Temperature Coefficient		-	0.1	-	nm/℃
Wavelength Current Coefficient		-	0.003	-	nm/mA
Center Wavelength	λ0	1545	1550	1555	nm	P=70mW，T=25℃
Side Mode Suppression Ratio	SMSR	36	-	-	dB	T=-5~75℃, P=70mW
Spectral Linewidth	Δλ	-	70	100	kHz	T = T_set, IF = I_op, FWHM
Polarization extinction ratio	PER	18			dB	Slow axis
Front/Back Ratio	Asym	-	20	-		P=5mW
Optical Isolation	ISO	32	-	-	dB
Monitor PD Current	IMPD	100		2500	μA	I_F = I_OP , V_MPD = -5 V

Fiber Characteristics
Parameter	Min.	Typ	Max	Unit	Note
Fiber type: Polarization maintaining PM-1550
Fiber length (module case to ﬁber end)	1			m
Connector					FC/APC
Jacket		∅900		um

Mechanical Design Diagram and Pin DefinitionsThe mechanical design diagram is shown in Figure 1. (Dimension in mm)

PIN	Description	PIN	Description
1	TEC+	8	NC
2	Thermistor	9	NC
3	Monitor anode(+)	10	Laser anode（+）
4	Monitor anode(-)	11	Laser anode（-）
5	Thermistor	12	NC
6	NC	13	Package ground
7	NC	14	TEC(-)

Precautions

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

a.Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.

b. Humidity in working environment should be controlled equal or above 40 percent RH.

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.

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