Y5010020016 1640nm DFB Laser Diode Butterfly Module Specification

所属分类： DFB

特点：1640nm波长边发射分布式反馈多量子阱(MQW)

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PN: Y5010020016

1640 nm DFB Laser Diode Butterfly Module Specification

Features

Multi-quantum well(MQW) of Edge-Emitting DFB for 1640nm wavelength
High output power ＞10mW
Excellent SMSR Performance＞42dB
High reliability design.
RoHS Compliant.
14pin butterfly package （with TEC/NTC and FC/APC connector of single mode fiber ）

Applications:

Ø INSTRUMENTATION

Description:

The 1640nm laser module is Multi-quantum well（MQW）DFB laser chip in 14-pin butterfly package with thermoelectirc cooler(TEC), thermistor(NTC) , monitor photodiode(MPD), optical isolator,lens inside。With compact structure and small volume，the products are available in high precision NTC and TEC。 The advantages of high stability in power and 1640nm wavelength of lasers make them widely used in INSTRUMENTATION.

Absolute Maximum Ratings

Table 1 - Absolute Maximum Ratings

Parameter	Symbol	Min	Max.	Unit
Operating Case Temperature	Tc	-10	70	℃
Storage Temperature	Tstg	-40	85	℃
Relative Humidity	RH	-	85	%
Forward current（T=25℃）	Iop	-	100	mA
Reverse voltage(T=25℃）	Vr	-	2	V
TEC Current	ITEC	-	1.2	A
TEC Voltage	VTEC	-	4	V

Optical Characteristics (T=25℃）

Parameter	Symbol	Test Condition	Min	Typ.	Max.	Unit
Forward Voltage	Vf	CW	-	-	2	V
Center Wavelength	λ	CW	1638	1640	1642	nm
Threshold Current	Ith	CW	-	-	35	mA
Optical Output Power	Po	CW	10	-	-	mW
Side-mode Suppression Ratio	SMSR	CW	42	-	-	dB
Thermistor Resistance	Rt	@25℃	9.5	10	10.5	KΩ
Thermistor Sensitivity Index	B	B25/50	3890	3930	3970	K
Fiber Bend Radius	-	-	-	0.9	-	mm
Fiber length	-		900	1000	1100	mm
Connector	-	FC/APC

Mechanical Design Diagram and Pin Definitions.The mechanical design and Connections diagram is shown in Figure 1. (Dimension in mm)

Precautions

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.

b. Humidity in working environment should be controlled equal or above 40 percent RH.

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.

关键词：Y5010020016 1640nm DFB Laser Diode Butterfly Module Specification

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