Y5010020010 1310nm DFB Laser Diode Butterfly Module Specification

所属分类： DFB

特点：高输出功率 > 50mW（出光纤）

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PN: Y5010020010

1310nm DFB Laser Diode Butterfly(14PIN) Module Specification

Features

High output power > 50mW ex-fiber
The CWDM High-power laser is a ridge structure design with multi-quantum well (MQW) active layer and a distributed feedback grating
Integrated free-space optical isolator
Mode-hop free continuous tuning
Proprietary mirror coating technology enabling high reliability
Built-in monitor photodiode
900um loose tube on fiber

Applications Areas:

Fiber optic communication systems
Sensing and Measurement
Medical and Biotechnology
Consumer Electronics and Emerging Areas

Absolute Maximum Ratings

Table 1 - Absolute Maximum Ratings

Parameter	Symbol	Min	Max.	Unit
Storage Temperature	Ts	-40	85	℃
Operation Temperature	Top	-	70	℃
Relative Humidity	RH	5	85	%
Forward current	IF	-	600	mA
Forward voltage	VF	-	1.6	V
Reverse voltage	-	-	2	V
TEC Current	ITEC	-	1.2	A
TEC Voltage	VTEC	-	4	V

Parameter	Symbol	Test Condition	Min	Typ.	Max.	Unit
Threshold Current	Ith	CW	-	-	50	mA
Operating Voltage	Vop	CW, IFLD=250mA	-	-	3	V
Peak Wavelength	λ	CW, IFLD=250mA	1307	1310	1313	nm
Optical Output Power	Po	CW, IFLD=250mA	50	-	-	mW
Side-mode Suppression Ratio	SMSR	CW, IFLD=250mA	40	50	-	dB
Spectral Width (@-20dB)	Δλ	CW, IFLD=250mA	-	0.3	-	nm
Slope Efficiency	SE		0.15	0.2	0.3	w/A
Monitor Operating Current	Im	CW, IFLD=250mA VRMPD=5V	100	-	2000	uA
Thermistor Resistance	Rt	@25℃	9.5	10	10.5	KΩ
Thermistor Sensitivity Index	B	B25/50	3890	3930	3970	K
isolation	ISO		30	-	-	dB
Polarization Extinction Ratio	PER	CW, IFLD=250mA	18	-	-	KHz

Optical Characteristics (T=25℃）

Mechanical Design Diagram and Pin Definitions.The mechanical design and Connections diagram is shown in Figure 1. (Dimension in mm)

Precautions

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.

b. Humidity in working environment should be controlled equal or above 40 percent RH.

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.

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