YB6010010487 1550nm 18Ghz DFB Laser Diode Butterfly Module Specification

所属分类： ROF

The 1550nm 18Ghz laser module is series module the WDM transmission of broadband analog signals frequency is a directly modulated MQW DFB laser, which up to 18GHz. The lasers built in optical isolator,TEC,thermistor,laser chip,and monitor photodiode are hermetically in a 7PIN butterfly package.

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PN: YB6010010487

1550nm 18Ghz DFB Laser Diode Butterfly Module Specification

Features:

Directly Modulated 1550nm DFB Lasers
High-frequency response up to 18GHz
RF SMA or K-Connector
Wide operation temperature optional

Applications:

RF over fiber
Analog RF links transmission
Test and measurement
RF Delay line

Description:

The 1550nm 18Ghz laser module is series module the WDM transmission of broadband analog signals frequency is a directly modulated MQW DFB laser, which up to 18GHz. The lasers built in optical isolator, TEC, thermistor, laser chip, and monitor photodiode are hermetically in a 7PIN butterfly package.

Absolute Maximum Ratings

Table 1 - Absolute Maximum Ratings

Parameter	Symbol	Min.	Max
Storage Temperature	℃	-40	85
Operation Case Temperature	℃	-20	65
Laser reverse voltage(T=25℃)	V	-	2
Photodiode reverse voltage	V	-	20
See Opt J	℃	-55	85
TEC current	A		1.7
RF Input Max. power	DBm		20

Optical & Electrical Characteristics
Parameter	Symbol	Min.	Typ	Max	Unit	Note
Threshold Current	Ith	-	-	25	mA	T=25℃
Operation Current	Iop	-	-	100	mA	T=25℃
Output Optical Power	Po	-	10	-	mW	T=25℃，IF=Iop
Input impedance	Zin	-	50	-	Ω	T=25℃
Wavelength Temperature Coefficient		-	0.1	-	nm/℃
Wavelength Current Coefficient		-	0.003	-	nm/mA
Center Wavelength	λ0	1547	1550	1553	nm	T=25℃，IF=Iop
Side Mode Suppression Ratio	SMSR	35	-	-	dB	T=25℃, IF=Iop
Relative intensity Noise	RIN	-	-150	-	DB/ Hz	100MHz-3GHz
Thermistor Resistance	Rt	9.9	10	10.1	KΩ
3dB RF Bandwidth	-	-	18	-	Ghz
Optical Isolation	ISO	30	-	-	dB
Monitor PD Current	Im	50		2500	μA	I_F = I_OP , V_MPD = -5 V

Mechanical Design Diagram and Pin DefinitionsThe mechanical design diagram is shown in Figure 1. (Dimension in mm)

Connections

Precautions

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.

b. Humidity in working environment should be controlled equal or above 40 percent RH.

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.

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