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友阳光电

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友阳光电

友阳光电

友阳光电

友阳光电

友阳光电

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YB010010002 1064nm DFB Laser Diode Butterfly Module Specification

YB010010002 1064nm DFB Laser Diode Butterfly Module Specification

所属分类: 1064nm 种子源

The 1064nm DFB Laser Diode Butterfly Module, with built-in TEC, thermistor, and MPD integrated in the 14PIN butterfly packaging. The hermetic design meets the requirements of telecommunication , with a narrow linewidth and high power,and at the same time support customer-specified pin definition customization.

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PN: YB010010002

1064nm DFB Laser Diode Butterfly Module Specification

Features

Wavelengths:1064nm

High reliability

Applications:

  Metrology    Seedlaser   Spectroscopy

Description

The 1064nm DFB Laser Diode Butterfly Module, with built-in TEC, thermistor, and MPD integrated in the 14PIN butterfly packaging. The hermetic design meets the requirements of telecommunication , with a narrow linewidth and high power,and at the same time support customer-specified pin definition customization.

 

Absolute Maximum Ratings 

Table 1 - Absolute Maximum Ratings

ParameterSymbolMin.Max
Storage Temperature-85
Operation Temperature-60
Optical output power (T=25℃)mw-250
Laser reverse voltage(T=25℃)V-2
Laser forward current(T=25℃)mA-500

 

                                                                        Optical & Electrical Characteristics
ParameterSymbolMin.TypMaxUnitNote
Threshold CurrentIth202530mAT=25℃
Output Optical PowerPo2036-mWIop=100mA,T=25℃
Slope Efficiency(Front facet)η0.50.9-W/AT=25℃
Forward voltageVf1.51.72VIop=50mA,T=25℃
Wavelength Temperature Coefficient -0.08-nm/℃Iop=100mA,T=15~30℃
Wavelength Current Coefficient -0.005-nm/mAIop=100~300mA,T=25℃
Peak Wavelengthλp106210641066nmIop=100mA,T=25℃
Side Mode Suppression RatioSMSR35--dBIop=100mA,T=25℃
TEC Voltage -4-V 
TEC Current -2.5-mA 
Resistance value -10-T=25℃
Fiber Characteristics
ParameterMin.TypMaxUnitNote
Fiber type: SM CORNING HI1060     
Fiber length (module case to fiber end)1  m 
Connector    FC/APC
Jacket ∅900 um 

Precautions 

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection. 

a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended. 

b. Humidity in working environment should be controlled equal or above 40 percent RH. 

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc. 

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product. 

 

Mechanical Design Diagram and Pin Definition. The mechanical design diagram is shown in Figure 1. (Dimension in mm)

                                                                                             PIN Definition

PINDescriptionPINDescription
1TEC+8NC
2Thermistor9NC
3Monitor anode(+)10Laser anode(+)
4Monitor anode(-)11Laser anode(-)
5Thermistor12NC
6NC13Package ground
7NC14TEC(-)

关键词:YB010010002 1064nm DFB Laser Diode Butterfly Module Specification

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YB010010002 1064nm DFB Laser Diode Butterfly Module Specification

The 1064nm DFB Laser Diode Butterfly Module, with built-in TEC, thermistor, and MPD integrated in the 14PIN butterfly packaging. The hermetic design meets the requirements of telecommunication , with a narrow linewidth and high power,and at the same time support customer-specified pin definition customization.

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