Y3020040008 1653.7nm DFB Laser Diode TO56 Specification

所属分类：气体传感

特点：1653.7nm 典型发射波长

产品咨询

文件下载

首页

产品详情

PN: Y3020040008

1653.7nm DFB Laser Diode TO56 Specification

Features

1653.7nm typical emission wavelength
TO56 package with TEC and 7.5mm aspheric lens
ROHS Compliant
Compliant with Telcordia GR-468

Applications:

TDLAS

Description:

The Product is a directly modulated 1653.7nm DFB laser diode devices in hermetic TO-56 package.The product is available with aspheric lens cap、 and co-packaged InGaAs monitoring photodiode.

Absolute Maximum Ratings

Table 1 - Absolute Maximum Ratings

Parameter	Symbol	Min.	Max
Storage Temperature	℃	-40	85
Operation Temperature(CASE)	℃	-40	70
Laser reverse voltage(T=25℃)	V	-	2
Laser forward current(T=25℃)	mA	-	100

Optical & Electrical Characteristics
Parameter	Symbol	Min.	Typ	Max	Unit	Note
Threshold Current	Ith	6		1.8	mA	T=25℃
Output Optical Power	Po	6	-	-	mW	T=25℃，If=50mA
Forward voltage	Vf	1	-	1.5	V	T=25℃,CW
Center Wavelength	λ	1651	1653.7	1657	nm	T=25℃,If=50mA
Side Mode Suppression Ratio	SMSR	35	-	-	dB	T=25℃,CW
Spectral width	Δλ	-	-	1	nm	T=25℃,CW
Monitor PD Current	Im	100	-	1000	μA	T=25℃,If=50mA
Monitor Dark Current	Id	-	-	100	nA	T=25℃,Vr=-5v
Focus length	FL	7.1	7.5	7.6	mm	T=25℃,If=Ith+20mA

The Mechanical Design Diagram and Pin Definitions.The mechanical design diagram is shown in Figure 1. (Dimension in mm)

Precautions

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.

b. Humidity in working environment should be controlled equal or above 40 percent RH.

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.

关键词：Y3020040008 1653.7nm DFB Laser Diode TO56 Specification

上一条： 1580nm DFB TDLAS TO39 Specification(Y3020100003)

下一条：没有了！