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PN: Y3050080001
50G COMBO OLT OSA SPECIFICATION
Description
This single-fiber optical sub-assembly is designed for High-speed transmission and receiver applications.It is integrated with 50Gbs/s 1342nm EML、10Gb/s 1577nm EML and 2.5Gb/s 1490nm DFB Transmitter with TEC and NTC ，the other 50Gb/s 1286nm、10Gb/s 1270nm and 1.25Gb/s 1310nm Receiver with APD and TIA together with optical filters and isolator for beam direction.
Features
⚫1342nm SOA EA electric absorption modulated cooled laser
⚫1577nm SOA EA electric absorption modulated cooled laser and 1490nm DFB cooled laser
⚫ High sensitive APD -TIA of 50G/10G/1.25G
⚫ -5~75℃ Operating temperature range
⚫ LC connector
⚫ Comply with ROHS requirements
Application：
⚫50G COMBO OLT
Absolute Maximum Ratings
| Parameter | Symbol | Min. | Max. | Unit | Note |
| Laser Diode Reverse Voltage | VRL | -- | 1.7 | V | |
| Laser Diode Forward Current | IFL | -- | 150 | mA | |
| SOA Forward Current | Isoa | -- | 120 | mA | |
| SOA Reverse Voltage | Vrs | -- | -2 | V | |
| Modulator Reverse Voltage | Vmr | -- | -3 | V | |
| TEC Voltage | -- | -- | 5.2 | V | |
| TEC Current | -- | -- | 2.5 | A | |
| Operate Temperature | TOP | -5 | 75 | ℃ | |
| Storage Temperature | Tst | -40 | 85 | ℃ |
Optical and Electrical Characteristics of Transmitter and Recevier Characteristics( Tc=25℃,unless other specified)
| 1342 EML Transmitter | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Nominal bit rate | BR | -- | 50 | -- | Gb/s | CW, Iop=100mA,Isoa=100mA Vea=0V， Top=45℃ |
| Threshold Current | Ith | -- | -- | 30 | mA | |
| Optical power | Po | 7.0 | -- | -- | mW | |
| Forward Voltage | Vf | -- | -- | 2 | V | |
| Center wavelength | λp | 1340 | 1342 | 1344 | nm | |
| Side Mode Suppression Ratio | SMSR | 35 | -- | -- | nm | |
| Spectral width | △λ | -- | -- | 0.4 | nm | |
| Thermoelectric Cooler Power | -- | -- | -- | 1.1 | W | CW, Tld=45°C |
| Thermoelectric Cooler Current | -- | -- | -- | 1.5 | A | CW, Tld=45°C |
| Thermoelectric Cooler Voltage | -- | -- | -- | 2.8 | V | CW, Tld=45°C |
| 1577 EML Transmitter | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| LD Forward Voltage | Vf | -- | -- | 2.5 | V | Iop=100mA,Isoa=80mA； Vea=0V ,Top=45℃ |
| Operation Current | Iop | -- | 100 | 120 | mA | |
| Output Power | Po | 6.5 | -- | -- | mW | |
| Thermoelectric Cooler Power | -- | -- | -- | 1.1 | W | CW, Tld=45°C |
| Thermoelectric Cooler Current | -- | -- | -- | 1.5 | A | CW, Tld=45°C |
| Thermoelectric Cooler Voltage | -- | -- | -- | 2.8 | V | CW, Tld=45°C |
| 1490 DML Transmitter | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Threshold Current | Ith | -- | 8 | 15 | mA | -- |
| LD Forward Voltage | Vf | -- | 1.1 | 1.6 | V | Ith+20mA |
| Output Power | Po | 1.55 | -- | -- | mW | Ith+20mA |
| 1286 Receiver | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Nominal bit rate | BR | -- | 49.76 | -- | Gb/s | -- |
| Receiver wavelength | λp | 1284 | 1286 | 1288 | nm | -- |
| Supply Current | Icc | 40 | 60 | 75 | mA | Vcc=3.3V |
| Breakdown Voltage | Vbr | 10 | -- | 40 | V | Id=100uA,Vcc off |
| Operating Voltage | Vop | -- | Vbr*0.9 | -- | V | -- |
| Dark Current | Id | -- | -- | 100 | nA | Vop，Pin=0uw,Tc=25℃ |
| Responsivity | Res | 5 | -- | -- | uA/uW | Vop，Pin=-30dBm，λ=1286nm，1284nm，1288nm |
| Sensitivity | Sen | -- | -- | -25.7 | dBm | 49.76 Gb/s, BER=10-2 , ER=6dB, Vop |
| Optical Isolate | IOS | 30 | -- | -- | dB | @1270nm、1280nm、1292nm、1310nm |
| Optical crosstalk | CT | 45 | -- | -- | dB | 1490nm,1577nm,1342nm |
| 1270 Receiver | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Supply Current | Icc | 30 | 60 | mA | Vcc=3.3V | |
| Breakdown Voltage | Vbr | 35 | 60 | V | Id=10uA | |
| Operating Voltage | Vop | -- | Vbr-3 | -- | V | -- |
| Dark Current | Id | -- | -- | 100 | nA | Vop，Pin=0uw,Tc=25℃ |
| Responsivity | Res | 8 | -- | -- | uA/uW | Vop，Pin=-30dBm，λ=1270nm，1280nm |
| Sensitivity | Sen | -- | -- | -32 | dBm | 10Gb/s, NRZ，BER=10-3，ER=6dB，PRBS31，Vop |
| Optical Isolate | IOS | 30 | -- | -- | dB | @1284nm，1286nm，1288nm，1292nm，1310nm |
| Optical crosstalk | CT | 45 | -- | -- | dB | 1490nm,1577nm,1342nm |
| 1310 Receiver | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Supply Current | Icc | 30 | 60 | mA | Vcc=3.3V | |
| Breakdown Voltage | Vbr | 35 | 60 | V | Id=10uA | |
| Operating Voltage | Vop | -- | Vbr-3 | -- | V | -- |
| Dark Current | Id | -- | -- | 100 | nA | Vop，Pin=0uw,Tc=25℃ |
| Responsivity | Res | 8 | -- | -- | uA/uW | Vop，Pin=-30dBm，λ=1310nm |
| Sensitivity | Sen | -- | -- | -37 | dBm | 1.25Gb/s, NRZ，BER=10-12，ER=10dB，PRBS23，Vop |
| Optical Isolate | IOS | 30 | -- | -- | dB | @1270nm、1280nm、1284nm、1286nm、1288nm |
| Optical crosstalk | CT | 45 | -- | -- | dB | 1490nm,1577nm,1342nm |
.Mechanical Design Diagram and Pin Definitions(Dimension in mm)
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
关键词：Y3050080001 50G COMBO OLT OSA SPECIFICATION
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