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友阳光电

友阳光电

友阳光电

友阳光电

友阳光电

友阳光电

友阳光电

友阳光电

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Y3020040003 10G 1577nm DFB Laser Diode TO56 Specification

Y3020040003 10G 1577nm DFB Laser Diode TO56 Specification

所属分类: 10G DML TO

特点: 1577nm 典型发射波长

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PN: Y3020040003

10G 1577nm DFB Laser Diode TO56 Specification 

Features

  • 1577nm typical emission wavelength
  • Data rate up to 10.3125Gbps
  • TO56 package with TEC and 12.1mm aspheric lens
  • ROHS Compliant
  • Compliant with Telcordia GR-468

 

Applications:

 10G EPON OLT XG COMBO OLT 

  

Description:

   The Product is a directly modulated 10Gbps 1577nm DFB laser diode devices in hermetic TO-56 package.The product is available with aspheric lens capNTC, and co-packaged InGaAs monitoring photodiode.

 

Absolute Maximum Ratings 

Table 1 - Absolute Maximum Ratings

Parameter

Symbol

Min.

Max

Storage Temperature

-40

85

Operation Temperature(CASE)

-10

85

Laser reverse voltage(T=25℃)

V

-

2

Laser forward current(T=25℃)

mA

-

120

TEC current

A

 

0.94

TEC voltage

V

 

2.4

PD reverse bias voltage(T=25℃)

V

 

20

PD forward current(T=25℃)

 mA

 

2

 

Optical & Electrical Characteristics

Parameter

Symbol

Min.

Typ

Max

Unit

Note

Threshold Current

Ith

-

8

15

mA

T=45℃

Output Optical Power

Po

8

-

-

mW

T=25℃If=50mA

Forward voltage

Vf

-

1.1

1.6

V

T=25℃,CW

Operating current

Iop

-

-

80

nm/℃

T=25℃,CW

Slope efficiency

Se

0.25

-

-

mw/mA

T=25℃,CW

Center Wavelength

λ

1575

1577

1580

nm

T=25℃,If=50mA

Side Mode Suppression Ratio

SMSR

35

-

-

dB

T=25℃,CW

Spectral width

Δλ

-

0.1

-

nm

T=25℃,10Ghz at -20dB

Resistance

Rs

-

8

10

Ω

T=25,If=50mA

Monitor PD Current

Im

100

-

1000

μA

T=25℃,If=50mA

Monitor Dark Current

Id

-

-

100

nA

T=25℃,Vr=-5v

Focus length

FL

11.6

12.1

12.6

mm

T=25℃,If=Ith+20mA

Resistance value (thermister)

R

-

10

-

T=25

The Mechanical Design Diagram and Pin Definitions.The mechanical design diagram is shown in Figure 1. (Dimension in mm)

 

 

 

 

 

 

 

Precautions 

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection. 

a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended. 

b. Humidity in working environment should be controlled equal or above 40 percent RH. 

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc. 

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product. 

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