25G 1270 nm DFB 1330nm PD LC BIDI BOSA SPECIFICATION V1.0

所属分类： 25G BIDI OSA

特点：LC接头双向操作

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PN: Y3050060009

25G 1270 nm DFB /1330 nm PD LC BIDI BOSA SPECIFICATION

Features

LC Receptacle bi-directional operation
Integrated WDM filter
Un-cooled operation from -40℃ to 85℃
Data rate for 25Gbps
With optical isolator
Comply with Telcordia GR-468 and ROHS

Description

This LC receptacle bi-directional optical module uses multi-quantum-well structured DFB laser diode and PIN-TIA receiver integrated WDM filter inside for 25Gbps industrial temperature application.

Absolute Maximum Ratings

Table 1 - Absolute Maximum Ratings

Parameter	Symbol	Min.	Max
Storage Temperature	℃	-40	85
Operating Temperature	℃	-40	85
Reverse Voltage (Laser Diode)	V	-	2
Laser forward current(T=25℃)	mA	-	100
Lead Soldering Temperature (10 sec)	℃	-	260

Transmitter
Parameter	Symbol	Min.	Typ	Max	Unit	Note
Threshold Current	Ith	-	8	12	mA	CW，Tc=25℃
Output Optical Power	Po	0.35	-	0.7	mW	Iop=Ith+20mA,Tc=25℃
		0.3	-	0.9		Iop=Ith+20mA,Tc=-40℃
		0.3		0.9		Iop=Ith+30mA,Tc=85℃
Monitor Current(PD)	Im	0.043	-	1	mA	Iop=Ith+20mA,Tc=25℃
Dark Current	Id	-	-	100	nA	V=-1V
Tacking Error	TE	-1.5	-	1.5	dB	Tc=-40~85℃
Peak Wavelength	λp	1274.5	1271	1277.5	nm	Iop=Ith+20mA，Tc=25℃
Side Mode Suppression Ratio	SMSR	35	-	-	dB	Iop=Ith+20mA,Tc=-40~85℃
spectral width	△λ	-	-	1	nm	Iop=Ith+20mA,Tc=-40~85℃

Receiver
Parameter	Symbol	Min.	Typ	Max	Unit	Note
Supply Voltage	Vcc	3	3.3	3.6	V	Tc=25℃
Supply Current	Icc	-	25	34	mA	Tc=25℃
Responsibility	Res	0.65	-	-	A/W	TIA=3.3V，1330nm
Sensitivity	Sen	-	-	-11.5	dBm	PRBS231-1 ,BER=10-12,ER=5dB,25.78Gpbs,λ=1330nm
Saturation Power	Psat	2.5		-	dbm	PRBS231-1 ,BER=10-12,ER=5dB,25.78Gpbs,λ=1330nm
Return Loss	RL	12	-	-	dB	λ=1330nm

Mechanical Design Diagram and Pin Definitions

The mechanical design diagram is shown in Figure 1. (Dimension in mm)

Precautions

Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.

b. Humidity in working environment should be controlled equal or above 40 percent RH.

c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.

d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.

关键词：25G 1270 nm DFB 1330nm PD LC BIDI BOSA SPECIFICATION V1.0

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